A Novel Modified Lateral Insulated Gate Transistor Structure

Insulated Gate Bipolar Transistor (IGBT) Basics

IGBT Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power MOSFET and BJT, the IGBT has been introdu...

Silicon - on - Insulator Lateral - Insulated - Gate - Bipolar - Transistor with Built - in Self - anti - ESD Diode

Power SOI (Silicon-On-Insulator) devices have an inherent sandwich structure of MOS (MetalOxide-Semiconductor) gate which is very easy to suffer ESD (Electro-Static Discharge) overstress. To solve this reliability problem, studies on design and modification of a built-in self-anti-ESD diode for a preliminarily optimized high voltage SOI LIGBT (Lateral-Insulated-Gate-Bipolar-Transistor) were car...

A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device

Modelling an Insulated Gate Bipolar Transistor Using Bond Graph Techniques

Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of the bond graph techniques to model modular power semiconductor devices. Furthermore, the IGBT is a ...

Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development

A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing density and thus reduce its on-resistance per...